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IRFP150VPBF hexfet ? power mosfet parameter typ. max. units r jc junction-to-case CCC 1.1 r cs case-to-sink, flat, greased surface 0.24 CCC c/w r ja junction-to-ambient CCC 40 thermal resistance www.irf.com 1 v dss = 100v r ds(on) = 24m ? i d = 47a s d g advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistanceper silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of to-220 devices. the to-247 is similar but superior to the earlier to-218 packcage because of its isolated mounting hole. advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated lead-free description absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 46 i d @ t c = 100c continuous drain current, v gs @ 10v 32 a i dm pulsed drain current 230 p d @t c = 25c power dissipation 140 w linear derating factor 0.91 w/c v gs gate-to-source voltage 20 v i ar avalanche current 28 a e ar repetitive avalanche energy 20 mj dv/dt peak diode recovery dv/dt 5.8 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) pd - 95515 to-247ac downloaded from: http:///
2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c, i s = 28a, v gs = 0v t rr reverse recovery time CCC 140 220 ns t j = 25c, i f = 28a q rr reverse recovery charge CCC 670 1010 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 47 230 repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). starting t j = 25c, l = 0.70mh, r g = 25 ? , i as = 28a, v gs =10v (see figure 12). i sd 28a di/d 380a/s, v dd v (br)dss , t j 175c. pulse width 400s; duty cycle 2%. this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175c . parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.13 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC CCC 24 m ? v gs = 10v, i d =28a v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 32 CCC CCC s v ds = 25v, i d = 28a CCC CCC 25 a v ds = 100v, v gs = 0v CCC CCC 250 v ds = 80v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 130 i d = 28a q gs gate-to-source charge CCC CCC 26 nc v ds = 80v q gd gate-to-drain ("miller") charge CCC CCC 43 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time CCC 12 CCC v dd = 50v t r rise time CCC 58 CCC i d = 28a t d(off) turn-off delay time CCC 45 CCC r g = 2.5 ? t f fall time CCC 47 CCC v gs = 10v, see fig. 10 between lead, CCC CCC 6mm (0.25in.)from package and center of die contact c iss input capacitance CCC 3130 CCC v gs = 0v c oss output capacitance CCC 410 CCC v ds = 25v c rss reverse transfer capacitance CCC 72 CCC pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy CCC 1060 280 mj i as = 28a, l = 0.70mh nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current downloaded from: http:///
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 3.0 4.0 5.0 6.0 7.0 8.0 9.0 v gs , gate-to-source voltage (v) 0.10 1.00 10.00 100.00 1000.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 15v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 57a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.5v 20s pulse width tj = 175c vgs top 16v 10v 7.0v 6.0v 5.0v 4.5v 4.0v bottom 3.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.5v 20s pulse width tj = 25c vgs top 16v 10v 7.0v 6.0v 5.0v 4.5v 4.0v bottom 3.5v downloaded from: http:///
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 0 2 5 7 10 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 28a v = 20v ds v = 50v ds v = 80v ds 0.0 0.5 1.0 1.5 2.0 v sd , source-todrain voltage (v) 0.10 1.00 10.00 100.00 1000.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec downloaded from: http:///
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f
1 0.1 %

+ -

25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
6 www.irf.com q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -

t p v (br)dss i as ! " #$ r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 0 110 220 330 440 550 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 11a 20a 28a downloaded from: http:///
www.irf.com 7
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - -
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8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/04 to-247 package is not recommended for surface mount application.
example: as s e mb le d on ww 35, 2000 lot code 5657 wi t h as s e mb l y this is an irfpe30 in the assembly line "h" 035h logo international rect ifier irfpe30 lot code assembly 56 57 part number dat e code ye ar 0 = 200 0 we e k 35 line h note: "p" in assembly line position indicates "lead-free"

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note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:///

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